mar. 2003 mitsubishi hvigbt modules CM400HB-90H high power switching use insulated type i c ................................................................... 400a v ces ....................................................... 4500v insulated type 1-element in a pack application inverters, converters, dc choppers, induction heating, dc to dc converters. CM400HB-90H outline drawing & circuit diagram dimensions in mm circuit diagram c g e cc e e c g 3 - m4 nuts 4 - m8 nuts c e cm e c e label 40 28 57 0.25 57 0.25 140 114 130 18 61.5 5.2 40 15 29.5 48.8 124 0.25 20 10.65 10.35 5 38 6 - 7mounting holes 2nd-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt modules (high voltage insulated gate bipolar transistor modules)
mar. 2003 mitsubishi hvigbt modules CM400HB-90H high power switching use insulated type v v v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 125 c v cc = 2250v, i c = 400a, v ge = 15v v cc = 2250v, i c = 400a v ge1 = v ge2 = 15v r g = 22.5 ? resistive load switching operation i e = 400a, v ge = 0v i e = 400a, die / dt = ?00a / s (note 1) junction to case, igbt part junction to case, fwdi part case to fin, conductive grease applied i c = 40ma, v ce = 10v i c = 400a, v ge = 15v (note 4) v ce = 10v v ge = 0v collector cutoff current gate-emitter threshold voltage gate-leakage current collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time emitter-collector voltage reverse recovery time reverse recovery charge thermal resistance contact thermal resistance collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage mounting torque mass v ge = 0v v ce = 0v dc, t c = 85 c pulse (note 1) pulse (note 1) t c = 25 c, igbt part charged part to base plate, rms, sinusoidal, ac 60hz 1min. main terminals screw m8 mounting screw m6 auxiliary terminals screw m4 typical value collector current emitter current 4500 20 400 800 400 800 4700 ?0 ~ +125 ?0 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 maximum ratings (tj = 25 c) symbol item conditions unit ratings v v a a a a w c c v n? n? n? kg v ces v ges i c i cm i e (note 2) i em (note 2) p c (note 3) t j t stg v iso min typ max 8 0.5 3.90 2.40 2.40 6.00 1.20 5.20 1.80 0.021 0.042 ma a nf nf nf c s s s s v s c k/w k/w k/w 3.00 3.30 72 5.3 1.6 3.6 4.00 160 0.015 i ces i ges c ies c oes c res q g t d (on) t r t d (off) t f v ec (note 2) t rr (note 2) q rr (note 2) r th(j-c)q r th(j-c)r r th(c-f) electrical characteristics (tj = 25 c) symbol item conditions v ge(th) v ce(sat) limits unit 6.0 4.5 note 1. pulse width and repetition rate should be such that the device junction temp. (t j ) does not exceed t jmax rating. 2. i e , v ec , t rr , q rr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. 3. junction temperature (t j ) should not increase beyond 125 c. 4. pulse width and repetition rate should be such as to cause negligible temperature rise. 7.5 2nd-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt modules (high voltage insulated gate bipolar transistor modules)
mar. 2003 mitsubishi hvigbt modules CM400HB-90H high power switching use insulated type 2nd-version hvigbt (high voltage insulated gate bipolar transistor) modules performance curves 10 1 10 0 23 10 1 5710 0 23 5710 1 23 5710 2 10 3 7 5 3 2 10 2 7 5 3 2 7 5 3 2 v ge = 15v, t j = 25 c c ies, c oes : f = 100khz c res : f = 1mhz 800 400 200 0 10 0 2468 600 0 8 6 4 2 0 200 400 600 800 v ge =15v t j = 25 c t j = 125 c 7000 5000 4000 3000 2000 1000 0 6000 20 0481216 v ce =10v t j = 25 c t j = 125 c 020 16 12 8 4 10 8 6 4 2 0 t j = 25 c t j =25 c capacitance characteristics ( typical ) capacitance c ies , c oes , c res ( nf ) collector-emitter voltage v ce ( v ) output characteristics ( typical ) collector current i c ( a ) transfer characteristics ( typical ) collector current i c ( a ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) collector-emitter saturation voltage characteristics ( typical ) collector-emitter voltage v ce ( v ) collector-emitter saturation voltage v ce(sat) ( v ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage characteristics ( typical ) 0 200 400 600 800 free-wheel diode forward characteristics ( typical ) emitter-collector voltage v ec ( v ) emitter current i e ( a ) 8 6 4 2 0 t j = 25 c t j = 125 c v ge =20v v ge =15v v ge =14v v ge =12v v ge =10v i c =800a c ies c oes c res i c =200a i c =400a v ge =8v
mar. 2003 mitsubishi hvigbt modules CM400HB-90H high power switching use insulated type 2nd-version hvigbt (high voltage insulated gate bipolar transistor) modules 8000 6000 0 2000 4000 7 5 3 2 710 2 10 1 7 23 5710 3 23 5 5 3 2 10 0 5 7 5 3 2 710 2 10 1 7 23 5710 3 23 5 5 5 3 2 10 0 7 5 3 2 10 1 5 v cc = 2250v, v ge = 15v r g = 22.5 ? , t j = 125 c inductive load v cc = 2250v, t j = 125 c inductive load igbt drive conditions v ge = 15v, r g = 22.5 ? 7 5 3 2 10 2 7 5 3 2 10 3 10 1 10 4 10 2 10 3 10 2 10 1 10 0 7 5 3 2 10 1 7 5 3 2 10 0 10 1 7 5 3 2 23 57 23 57 23 57 single pulse t c = 25 c r th(j c)q = 0.021k/ w r th(j c)r = 0.042k/ w 20 16 12 8 4 0 v cc = 2250v i c = 400a half-bridge switching time characteristics ( typical ) switching times ( s ) collector current i c ( a ) reverse recovery characteristics of free-wheel diode ( typical ) reverse recovery time t rr ( s ) emitter current i e ( a ) reverse recovery current i rr ( a ) transient thermal impedance characteristics normalized transient thermal impedance z th(j c) time ( s ) gate charge characteristics ( typical ) gate-emitter voltage v ge ( v ) gate charge q g ( nc ) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 5 10 15 20 30 25 gate resistance ( ? ) half-bridge switching energy characteristics ( typical ) switching energy ( j/p ) 0 4.0 3.0 2.0 1.0 5.0 0 200 400 800 600 half-bridge switching energy characteristics ( typical ) current ( a ) switching energy ( j/p ) v cc = 2250v, v ge = 15v, r g = 22.5 ? , tj = 125 c, inductive load e on t d(off) t d(on) t r t rr i rr t f e off e rec
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